AKBushy.par
2.0e-3 Cell membrane time-constant, tm (s).
2.0e-3 Potassium decay time-constant, tGk (s).
2.0e-3 Threshold time-constant, tTh (s).
0.95 Accommodation constant, c (dimensionless).
1.75e-3 Delayed rectifier postassium conductance, b (nano-Siemens).
1.25 Cell resting Threshold, Th0 (mV).
30.0 Action potential (mV).
0.75 Non-linear voltage constant, Vnl (mV).
-65.0 Reversal potential of the potassium conductance, Ek (mV).
-65.0 Reversal potential of all other conductances, Eb (mV).
0.022 Resting potassium conductance, gk (nS).
0.022 Resting component of all other conductances, gb (nS).
AKFusiform.par
12.0e-3 Cell membrane time-constant, tm (s).
7.5e-3 Potassium decay time-constant, tGk (s).
1.0e-3 Threshold time-constant, tTh (s).
0.0 Accommodation constant, c (dimensionless).
1.0e-3 Delayed rectifier postassium conductance, b (nano-Siemens).
11.5 Cell resting Threshold, Th0 (mV).
60.0 Action potential (mV).
-0.5 Non-linear voltage constant, Vnl (mV).
-65.0 Reversal potential of the potassium conductance, Ek (mV).
-65.0 Reversal potential of all other conductances, Eb (mV).
0.002 Resting potassium conductance, gk (nS).
0.002 Resting component of all other conductances, gb (nS).
AKSpiralG1.par
2.0e-3 Cell membrane time-constant, tm (s).
0.9e-3 Potassium decay time-constant, tGk (s).
20.0e-3 Threshold time-constant, tTh (s).
0.3 Accommodation constant, c (dimensionless).
0.00025 Delayed rectifier postassium conductance, b (nano-Siemens).
10.0 Cell resting Threshold, Th0 (mV).
50.0 Action potential (mV).
0.5 Non-linear voltage constant, Vnl (mV).
-65.0 Reversal potential of the potassium conductance, Ek (mV).
-65.0 Reversal potential of all other conductances, Eb (mV).
0.02 Resting potassium conductance, gk (nS).
0.0 Resting component of all other conductances, gb (nS).
AKStellate.par
5.0e-3 Cell membrane time-constant, tm (s).
2.0e-3 Potassium decay time-constant, tGk (s).
2.0e-3 Threshold time-constant, tTh (s).
0.0 Accommodation constant, c (dimensionless).
0.00025 Delayed rectifier postassium conductance, b (nano-Siemens).
12.0 Cell resting Threshold, Th0 (mV).
50.0 Action potential (mV).
0.5 Non-linear voltage constant, Vnl (mV).
-65.0 Reversal potential of the potassium conductance, Ek (mV).
-65.0 Reversal potential of all other conductances, Eb (mV).
0.02 Resting potassium conductance, gk (nS).
0.0 Resting component of all other conductances, gb (nS).
Dendrit1.par
normal output mode for model ("normal" or "scaled").
5000.0 Cut-off frequency (3 dB down point - Hz).
1.0 Signal multiplier scale (scaled mode only).
Dendrit2.par
scaled output mode for model ("normal" or "scaled").
300.0 Cut-off frequency (3 dB down point - Hz).
33.0 Signal multiplier scale (scaled mode only).
HHDCN1.par
#HHDCN1.par
normal Operation mode ("normal" or "voltage clamp").
on Injection mode ("on" or "off").
-0.010 Excitatory reversal potential (V).
-0.010 Inhibitory reversal potential (V).
80.0e-12 Cell capacitance (Farads).
100e-3 Resting signal duration - used when finding V0(s).
1e-8 Resting criteria, dV (V).
# Ion channel parameters
off Print ion channel tables mode ("on" or "off").
25e-9 Base leakage conductance (S).
-0.017 Leakage equilibrium potential (V).
User Ion channel mode ("User", later we'll have "wood" too).
3 Number of ion channel files.
:ParFiles:NC:IonChans:NaPConnr1.par Sodium ion channel format file.
:ParFiles:NC:IonChans:KPConnr1.par Potassium ion channel file.
:ParFiles:NC:IonChans:KAConnr1.par Potassium 'A' ion channel file.
HHDCNRo1.par
#HHDCNRo1.par
normal Operation mode ("normal" or "voltage clamp").
on Injection mode ("on" or "off").
-0.010 Excitatory reversal potential (V).
-0.010 Inhibitory reversal potential (V).
23e-12 Cell capacitance (Farads/cm^2).
100e-3 Resting signal duration - used when finding V0(s).
1e-5 Resting criteria, dV (V).
# Ion channel parameters
off Print ion channel tables mode ("on" or "off").
1.7e-9 Leakage conductance (S).
0.0028 Leakage equilibrium potential (V).
Rothman Mode option ("user", "rothman").
3 Number of ion channels.
22.0 Operating temperature (degrees C).
2.0 Leakge conductance Q10.
-0.120 Initial voltage for tables (V).
0.055 Final voltage for tables (V).
0.001 Voltage step for tables (V).
#Ion channels
Na+_Rothman Description.
0.055 Equilibrium potential (V).
325e-9 Base maximum conductance - 22oC (S).
2.0 Conductance Q10.
2 Activation exponent (int).
#Current parameters
# a b c d e f g h i j k
0.36 3 1 49 -1 49 -3 0 1 0 0 alpha
0 3 1 1 -0.4 3 1 58 -1 58 20 beta
2.4 3 0 1 1 68 3 0.8 10 1 61.3 alpha
0 3 1 1 3.60 3 0 1 1 21 -10 beta
K+High_Rothman Description.
-0.077 Equilibrium potential (V).
40e-9 Base maximum conductance - 22oC (S).
2.5 Conductance Q10.
1 Activation exponent (int).
#Current parameters
# a b c d e f g h i j k
0.0282 3 1 9 -1 9 -12 0 1 0 0 alpha
6 3 144 -30 6 3 0 1 1 62 1 beta
0 0 0 0 0 0 0 0 0 0 0 alpha
0 0 0 0 0 0 0 0 0 0 0 beta
K+Low_Rothman Description.
-0.077 Equilibrium potential (V).
20e-9 Base maximum conductance - 22oC (S).
2.5 Conductance Q10.
1 Activation exponent (int).
#Current parameters
# a b c d e f g h i j k
0.107 3 0 1 1 33 -13.1 0 1 0 0 alpha
0.0188 3 30 -30.3 0 1 0 0 1 0 1 beta
0 0 0 0 0 0 0 0 0 0 0 alpha
0 0 0 0 0 0 0 0 0 0 0 beta
HHDCNRo2.par
#HHDCNRo2.par
normal Operation mode ("normal" or "voltage clamp").
on Injection mode ("on" or "off").
-0.010 Excitatory reversal potential (V).
-0.010 Inhibitory reversal potential (V).
23e-12 Cell capacitance (Farads/cm^2).
100e-3 Resting signal duration - used when finding V0(s).
1e-5 Resting criteria, dV (V).
# Ion channel parameters
off Print ion channel tables mode ("on" or "off").
1.7e-9 Leakage conductance (S).
0.0028 Leakage equilibrium potential (V).
Rothman Mode option ("user", "rothman").
3 Number of ion channels.
38.0 Operating temperature (degrees C).
2.0 Leakge conductance Q10.
-0.120 Initial voltage for tables (V).
0.055 Final voltage for tables (V).
0.001 Voltage step for tables (V).
#Ion channels
Na+_Rothman Description.
0.055 Equilibrium potential (V).
325e-9 Base maximum conductance - 22oC (S).
2.0 Conductance Q10.
2 Activation exponent (int).
#Current parameters
# a b c d e f g h i j k
0.36 3 1 49 -1 49 -3 0 1 0 0 alpha
0 3 1 1 -0.4 3 1 58 -1 58 20 beta
2.4 3 0 1 1 68 3 0.8 10 1 61.3 alpha
0 3 1 1 3.60 3 0 1 1 21 -10 beta
K+High_Rothman Description.
-0.077 Equilibrium potential (V).
40e-9 Base maximum conductance - 22oC (S).
2.5 Conductance Q10.
1 Activation exponent (int).
#Current parameters
# a b c d e f g h i j k
0.0282 3 1 9 -1 9 -12 0 1 0 0 alpha
6 3 144 -30 6 3 0 1 1 62 1 beta
0 0 0 0 0 0 0 0 0 0 0 alpha
0 0 0 0 0 0 0 0 0 0 0 beta
K+Low_Rothman Description.
-0.077 Equilibrium potential (V).
20e-9 Base maximum conductance - 22oC (S).
2.5 Conductance Q10.
1 Activation exponent (int).
#Current parameters
# a b c d e f g h i j k
0.107 3 0 1 1 33 -13.1 0 1 0 0 alpha
0.0188 3 30 -30.3 0 1 0 0 1 0 1 beta
0 0 0 0 0 0 0 0 0 0 0 alpha
0 0 0 0 0 0 0 0 0 0 0 beta
MG92Stellate.par
2.0e-3 Cell membrane time-constant, tm (s).
0.9e-3 Potassium decay time-constant, tGk (s).
20.0e-3 Threshold time-constant, tTh (s).
0.3 Accommodation constant, c (dimensionless).
0.017 Delayed rectifier postassium conductance, b (nano-Siemens).
10.0 Cell resting Threshold, Th0 (mV).
50.0 Action potential (mV).
-10.0 Reversal potential of the potassium conductance, Ek (mV).
-60.0 Cell resting potential Er (mV).
MG94Stellate.par
1.0e-3 Cell membrane time-constant, tm (s).
3.0e-3 Potassium decay time-constant, tGk (s).
20.0e-3 Threshold time-constant, tTh (s).
0.1 Accommodation constant, c (dimensionless).
0.08 Delayed rectifier postassium conductance, b (nano-Siemens).
15.0 Cell resting Threshold, Th0 (mV).
50.0 Action potential (mV).
-10.0 Reversal potential of the potassium conductance, Ek (mV).
-60.0 Cell resting potential Er (mV).
